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| TEMPFET(R) BTS 130 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 130 VDS 50 V ID 27 A RDS(on) 0.05 Package TO-220AB Ordering Code C67078-A5001-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source peak voltage, aperiodic Continuous drain current, TC = 25 C ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 20 27 7.5 108 80 1200 75 - 55 ... + 150 E 55/150/56 K/W 1.67 75 C - W A Unit V VDS VDGR Vgs ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 C Tj = - 55 ... + 150 C Short circuit dissipation, Tj = - 55 ... + 150 C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA 1 04.97 TEMPFET(R) BTS 130 Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit V(BR)DSS 50 - 3.0 - 3.5 V VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C Drain-source on-state resistance VGS = 10 V, ID =17 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 17 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz VGS(th) 2.5 I DSS - - 1 100 10 300 A I GSS - - 10 2 0.04 100 4 0.05 nA A - RDS(on) gfs 8.0 13.0 940 500 180 25 60 100 75 18.0 S pF 700 1250 750 270 40 90 130 95 ns Ciss Coss - Crss - - - - - Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 t r Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 tf 2 04.97 TEMPFET(R) BTS 130 Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 54 A, VGS = 0 Reverse recovery time I F = IS, diF/dt = 100 A/s, VR = 30 V Reverse recovery charge I F = IS, diF/dt = 100 A/s, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 10 mA, Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C Forward current Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C Holding current, VTS(off) = 5 V, Switching temperature VTS = 5 V Turn-off time VTS = 5 V, ITS(on) = 2 mA Values typ. max. Unit IS I SM VSD - - - - - 1.5 150 1.0 27 108 A V 2.0 ns - C - t rr - Q rr - VTS(on) - - 1.4 - - - 0.1 0.2 - - 1.5 10 V ITS(on) - - 10 600 0.5 0.3 mA Tj = 25 C Tj = 150 C IH TTS(on) 0.05 0.05 150 C - s 0.5 2.5 toff 3 04.97 TEMPFET(R) BTS 130 Examples for short-circuit protection at Tj = - 55 ... + 150 C, unless otherwise specified. Parameter Symbol 1 Examples 2 - Unit Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 C, before short circuit VDS VGS ISC PSC tSC(off) 15 8.1 80 1200 25 30 5.9 37 1100 25 - - - - - V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... + 150C Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = - 55 ... + 150 C 4 04.97 TEMPFET(R) BTS 130 Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 s Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 C 5 04.97 TEMPFET(R) BTS 130 Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 17 A, VGS = 10 V (spread) Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 s, VDS = 25 V 6 04.97 TEMPFET(R) BTS 130 Continuous drain current ID = f (TC) Parameter: VGS 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 s (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz 7 04.97 TEMPFET(R) BTS 130 Transient thermal impedance Z Parameter: D = tp/T thJC = f (tp) 8 04.97 TEMPFET(R) BTS 130 TO 220 AB Standard Ordering Code C67078-A5001-A3 TO 220 AB SMD version E3045 Ordering Code C67078-A5001-A9 9.9 9.5 2.8 3.7 4.4 1.3 12.8 17.5 1 4.6 3) 9.2 1) 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 13.5 2) 15.6 9 04.97 TEMPFET(R) BTS 130 Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2000. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 04.97 |
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